| 1. | Loss on iignitionloi low current ion implanter
小电流离子注入机 |
| 2. | Particle contamination and system reformation in end station of ion implanter
离子注入机靶室尘埃污染与系统改造 |
| 3. | Medium current ion implanter
中电流离子注入机 |
| 4. | Medium energy ion implanter
中能量离子注入机 |
| 5. | Low energy ion implanter
低能量离子注入机 |
| 6. | An ion implanter without ion mass analyzer was applied to simulate the phi procedure to fabricate soi materials by implantation of water plasma ions . thin soi structure was successfully fabricated by the implanter using 50 ~ 90kev water plasma ion implantation with the dose ranging from 2 - 6 . 5 + 017cm - 2 and , subsequently , the high temperature annealing
我们使用无质量分析器的离子注入机，模拟等离子体离子注入过程，成功地在该注入机上用水等离子体离子注入制备出了界面陡峭、平整，表层硅单晶质量好，埋层厚度均匀的薄型soi材料。 |
